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Toshiba Introduces New Generation of 16M Synchronous DRAM Line Up

22 February, 1996


125MHz High Speed Data Transfer

TOKYO -- Toshiba Corporation today announced the introduction of new line up of 16 megabit synchronous DRAM, including multi-bit type models operating at as high a frequency as 125MHz. Sampling will start today. Mass production is scheduled to start in the second quarter of this calendar year, at a monthly production level of 100,000.

The line-up consists of 6 basic chip models, configured in 24 versions differentiated by speed, bit structure and interface. Their high speed performance and multi-bit structure are suited to a wide range of uses in powerful information and communications systems, including the buffer memories of MPEG-2 decoder LSIs, a key component of multimedia equipment, and the main memory of personal computers incorporating powerful microproccessors.

The chips utilize 0.45 micron processing technology and a modified circuit structure for high speed operation, so achieving a higher speed and smaller size than the earlier generation of 16M synchronous DRAMs they replace.

Speeds range from a minimum cycle time of 8 nanoseconds at 125MHz, the fastest operating speed, to 10ns at 100MHz, 12ns at 83MHz , and 13ns at 75MHz, assuring the chips produce the high levels of performance required to support today's advanced CPUs and digital signal processors. Two interfaces are available to support high frequency operation: the conventional LVTTL (low voltage transistor transistor logic) interface, and the SSTL (stub series terminated transceiver logic) interface.

The line-up consists of three types of bit configuration: 1 megaword x 16-bit structure; 2 megaword x 8-bit structure; and 4 megaword x 4-bit structure, assuring appropriate memory configurations for a wide variety of system designs.
The multi-bit structure is suited to the mainstream 32/64-bit input/output bus configuration of CPU systems in PCs. Just four 2Mx8-bit chips for 32-bit CPUs or four 1Mx16-bit chips for 64-bit CPUs can construct an efficient CPU system with 8 megabytes of main memory, the capacity required for smooth operation of PCs.

DRAMs are widely used as the main memories in computers, image processing equipment, and large volume data-buffer memories. With the processing speeds of CPUs incorporated in this equipment getting faster and faster, overall system performance requires DRAMs with a higher data transfer rate. Synchronous DRAMs operate synchronously with the CPU clock, promoting highly efficient cooperation between CPU and memory.


Models
Name Bit Structure Minimum Cycle Time Interface
TC59S1616AFT 1M x16-bit 8/10/12/13 LVTTL
TC59S1617AFT 1M x16-bit 8/10/12/13 SSTL
TC59S1608AFT 2M x8-bit 8/10/12/13 LVTTL
TC59S1609AFT 2M x8-bit 8/10/12/13 SSTL
TC59S1604AFT 4M x4-bit 8/10/12/13 LVTTL
TC59S1605AFT 4M x4-bit 8/10/12/13 SSTL


Major specifications
Process 0.45 micron CMOS triple layer polysilicon, double layer
aluminum wiring
Power Consumption 432mW (8ns), 324mW (10ns),
288mW (12ns), 270mW (13ns)
Voltage 3.3V +/- 0.3V
Package 400-mil 50/44-pin TSOP


Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement,but is subject to change without prior notice.

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