Toshiba and Fujitsu Announce Major Collaboration In Next-generation Memories|
3 December, 1998
Under an agreement signed today, a joint project team of approximately 100 researchers will be assembled at Toshiba's Advanced Microelectronics Center in Yokohama to focus on development of ultra high-density 0.13-micron process technology, device technologies, product design and prototype fabrication for 1-gigabit-generation DRAM devices. The total project budget is projected to exceed 30 billion yen.
The Toshiba-Fujitsu collaboration comes amidst fierce competition in the memory market, which has been eroding prices and increasing the importance of cost-competitive development operations. In addition, development of 0.13-micron process technology and other innovations needed to successfully achieve 1-gigabit-class DRAMs will require major technological breakthroughs. The collaboration announced today allows Fujitsu and Toshiba to effectively combine their R&D resources and complementary advanced semiconductor development skills so as to accelerate development of key technologies and optimize overall development investment. Moreover, the companies believe that any joint advances in major DRAM process technologies may also find application in microprocessors and a wide range of other semiconductor areas beyond memory devices.
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