Toshiba to Provide Leading-edge CMOS Process Technology to Taiwanese Partner Winbond|
16 March, 1999
Tokyo--Toshiba Corporation today announced a new manufacturing agreement with Winbond Electronics Corporation, one of Taiwan's leading manufacturers of semiconductors. Under the agreement, Winbond will manufactures DRAMs using 0.175 and 0.15 micron CMOS process technology licensed from Toshiba.
Toshiba and Winbond have a successful history of cooperation in manufacturing. In December 1995, Toshiba licensed Winbond Toshiba's 16M DRAM and 1M high speed SRAM technologies, under an agreement later extended to cover 64M DRAM and future 256M DRAM manufactured with 0.2m process technology. Under the new agreement, Toshiba will provide Winbond with 0.175 and 0.15m CMOS process technology for 64M, 128M and 256M DRAMs. Winbond will manufacture the memories under its own brand name and as OEM products for Toshiba. In preparation for the start of manufacturing, Winbond engineers will be trained in development, production and process technologies at Toshiba's Advanced Microelectronics Center and Yokkaichi works while Toshiba engineers will provide initial support for manufacturing at Winbond's Taiwanese plant.
The new agreement provides benefits to both companies and their long-term growth in the DRAM market and semiconductor business. Winbond will acquire leading-edge process technologies and expand its product line to state-of-the-art 256M DRAM. Toshiba will have access to highly qualified engineering and production outsourcing.
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