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Toshiba to Provide Leading-edge CMOS Process Technology to Taiwanese Partner Winbond

16 March, 1999

Tokyo--Toshiba Corporation today announced a new manufacturing agreement with Winbond Electronics Corporation, one of Taiwan's leading manufacturers of semiconductors. Under the agreement, Winbond will manufactures DRAMs using 0.175 and 0.15 micron CMOS process technology licensed from Toshiba.

Toshiba and Winbond have a successful history of cooperation in manufacturing. In December 1995, Toshiba licensed Winbond Toshiba's 16M DRAM and 1M high speed SRAM technologies, under an agreement later extended to cover 64M DRAM and future 256M DRAM manufactured with 0.2μm process technology. Under the new agreement, Toshiba will provide Winbond with 0.175 and 0.15μm CMOS process technology for 64M, 128M and 256M DRAMs. Winbond will manufacture the memories under its own brand name and as OEM products for Toshiba. In preparation for the start of manufacturing, Winbond engineers will be trained in development, production and process technologies at Toshiba's Advanced Microelectronics Center and Yokkaichi works while Toshiba engineers will provide initial support for manufacturing at Winbond's Taiwanese plant.

The new agreement provides benefits to both companies and their long-term growth in the DRAM market and semiconductor business. Winbond will acquire leading-edge process technologies and expand its product line to state-of-the-art 256M DRAM. Toshiba will have access to highly qualified engineering and production outsourcing.

Company Profile

CompanyWinbond Electronics Corporation
Address4 Creation Rd.III. Science-Based Industrial Park, Hsinchu, Taiwan
EstablishedSeptember 1st, 1987
CapitalNT$ 28.8 billion
PresidentChing-Chu Chang
SalesNT$ 15.56 billion (1998)

Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement,but is subject to change without prior notice.

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