Major Specifications of New Products

256M bit Double Data Rate Synchronous DRAMs
Process: 0.175 micron CMOS process technology
Power supply: 2.5V+-0.2V
Package: 66-pin 400 mil plastic TSOP, 0.65mm pin pitch
Interface: SSTL-2
Maximum data transfer rate: 70 286Mbps (CAS latency=2.5)
266Mbps (CAS latency=2.0)
75 266Mbps (CAS latency=2.5)
250Mbps (CAS latency=2.0)
80 250Mbps (CAS latency=2.5)
200Mbps (CAS latency=2.0)
Sample price: US$120

256M bit Double Data Rate Fast Cycle RAMs

Process: 0.175 micron CMOS process technology
Power supply: 2.5V+-0.2V
Package: 66-pin 400 mil plastic TSOP, 0.65mm pin pitch
Interface: SSTL-2
Maximum data transfer rate: 22 308Mbps (CAS latency=3.0)
266Mbps (CAS latency=2.0)
24 286Mbps (CAS latency=3.0)
250Mbps (CAS latency=2.0)
30 250Mbps (CAS latency=3.0)
200Mbps (CAS latency=2.0)
Sample price: US$200

256M bit and 288M bit Direct Rambus DRAMs

Process: 0.175 micron CMOS process technology
Power supply: 2.5V+-0.13V
Package: 92-pin Chip Size Package (CSP), 0.8mm ball pitch
Interface: RSL (Rambus Signaling Level)
Maximum data transfer rate: 8 800MHz
7 711MHz
6 600MHz
Sample price: US$150


Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement,but is subject to change without prior notice.