Toshiba to Provide Leading-edge CMOS Process Technology and IP Cores to Korea's Dongbu|
3 July, 2000
Tokyo-- Dongbu Electronics Co., Ltd. and Toshiba Corporation today announced that Toshiba has licensed state-of-the-art CMOS process technology to South Korea's Dongbu Electronics Co., Ltd.. The license covers Toshiba's advanced sub-micron CMOS process technology and its derivative process technology and IP cores, including standard cells, I/O cells, analog cells and micro cells with embedded flash memory, which Dongbu will use to manufacture logic LSIs. The agreement also calls for Toshiba to invest $50 million in year 2000 and 2001 in Dongbu's new facility in Eumsung, and secures Toshiba a share of the output of the new facility.
The agreement will see Toshiba provide Dongbu with leading-edge 0.25, 0.18 and next generation 0.15m (or 0.13m) CMOS process technology for manufacturing CMOS-based logic LSIs, embedded analog systems and NOR flash memory. It also covers provision of intellectual property in embedded cores for LSI, which Dongbu will manufacture cores for sale under its own brand name and as OEM products for Toshiba. Engineers from Dongbu will receive intensive training in development, production and process technologies from Toshiba in Japan, and Toshiba engineers will support initial manufacturing at Dongbu's plant in Korea.
The new agreement provides benefits to both companies in terms of long-term growth in the semiconductor business: Dongbu's acquisition of leading-edge process technologies will allow it to strengthen its presence in the semiconductor market, while Toshiba will have access to highly capable engineering and production outsourcing. Production using 0.25m process technology is well established at Oita Operations, and the plant is making a gradual shift to 0.18m technology. Toshiba will promote a strategy of expanding outsourcing partners who use process technologies transferred from Toshiba.
Dongbu will introduce the transferred technologies to mass production in 2001, and its monthly production capacity is expected to reach 45,000 eight-inch wafers in three years.
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