DDR Synchronous DRAMs, DDR Fast Cycle RAMs and Direct Rambus DRAMs

Toshiba Corporation today announced a series of new high speed 256-megabit DRAMs that will meet demands for increased memory capacity and enhanced performance in workstations, servers and large computers, and support high speed operation in image-processing and network applications. The extensive line-up of next generation products for the main memory and buffer memory of computers covers Double Data Rate (DDR) Synchronous DRAMs (SDRAMs), DDR Fast Cycle (FC) RAMs and Direct Rambus DRAMs (RDRAMs).

The new products are all based on advanced 0.175 micron process technology and support double-data transfer mode on both the rising and falling edge of the clock cycle, not just the rising edge. DDR FCRAMs, jointly developed with Fujitsu Limited, boost DRAM technology to achieve the fast random access at 30 nanoseconds cycle time of SRAM and achieve power consumption 30% lower than conventional DRAMs by narrowing the memory active areas. The Direct Rambus DRAMs, which operate at 800 megahertz and offer a data transfer rate of 1.6 gigabytes per second, have been developed by Toshiba, based on a license from Rambus Inc.

Samples are available now and volume production is slated for the fourth quarter of 2000.

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Outline of New Products

Major Specifications of New Products

Simulation Model

• FCRAM is a trademark of Fujitsu Limited.
• Rambus DRAM and Rambus are trademarks of Rambus Inc.
• Memory Modeler is a trademark of Denali Software Inc.