0.15-micron Meter Process Technology Achieves 40 nanosecond Access Time in Low Power Consumption SRAM Optimized for Mobile Phone Application

Tokyo--Toshiba Corporation today announced that it will commercialize 8Mb low power consumption SRAMs designed to maximize the operation of mobile phones. Manufactured with industry-leading 0.15-micron meter (μm) process technology, the new SRAMs have a 40-nanosecond (ns) access time, the fastest time yet achieved.

Starting in the first quarter of 2002, Toshiba will supply both wafers for multi-chip package manufacturers and packaged products based on customer choices. The company will follow this up in the second quarter of the year by launching 4Mb and 16Mb low power consumption SRAMs manufactured with the same advanced process technology.

The performance of the new 8Mb low power consumption SRAMs will reduce wait times in the memory system of mobile phones, enhancing overall system speed and performance. Devices operating with a 2.3 to 3.6V external power supply will support current 2.5V and 3.3V systems. Toshiba is also looking to future advances with devices supporting and growing demand for lower voltage products that operate with a 1.65 to 2.2V external power supply.

A wide package lineup covers thin small outline package (TSOP) type-1, 12mm x 20mm and 12mm x 14mm; and a fine ball grid array (FBGA), 7mm x 7mm. The plating of the IC leads is lead free.

Samples of packaged products will be available from February 2002 at 1,800 yen.

Production Schedule

Major Specifications

• The world's fastest 40ns access time is achieved by utilization of 0.15μm process technology.

• Support of 1.8, 2.5 and 3.3V power supply by integrating circuit for downward adjustment of external power to supply lower power to circuit.

• Various packages available: TSOP type-1 12mm x 20mm and 12mm x 14mm, and FBGA by 7mm x 7mm.

• Lead free plating of IC leads.

Product Lineup