Toshiba's New 64Mb and 128Mb NOR Flash Memory ICs Offer the World's Fastest Access Time|
11 March, 2002
achieve a 60-nanosecond access time
Tokyo--Toshiba Corporation today announced new, high performance 64-megabit and 128Mb NOR flash memory ICs that achieve a 60-nanosecond random access time, the fastest of any commercialized NOR flash memory. Both ICs are fabricated with leading-edge 0.16-micron process technology, have built-in page mode and support simultaneous read during write or erase.
Demand for NOR flash memory is growing in two key areas, set top boxes and mobile products. Recent mobile phones incorporate more application software and its successful operation requires high speed, high capacity NOR flash memory ICs. This need underpins Toshiba's decision to develop high capacity chips with cutting-edge system performance enhancements, including built in page mode and simultaneous read during write or erase.
Toshiba will mass produce the 64Mb and 128Mb ICs, at a level of 400,000 and 200,000 units a month, respectively, at Yokkaichi Operations, its main facility for manufacturing memory devices. The addition of these high performance, high capacity devices to its current product line-up will enhance customer choice and reinforce Toshiba's position in the NOR flash memory sector.
Key features of New NOR Flash Memory ICs
The 64Mb chip will be available in a 48-pin thin small outline package (TSOP) and the 128Mb chip in a 56-pin TSOP for set top box application. The chips will also be stacked in multi-chip packages (MCP) with SRAM and Pseudo-SRAM for space-limited mobile products.
Major Specifications of 64Mb and 128Mb NOR Flash Memory ICs
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