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Toshiba to Unveil 288Mb Network FCRAMs(TM) with the Industry's Fastest Random Access Time for Network Applications

30 September, 2002


Tokyo--Toshiba Corporation today announced that it has developed a series of 288Mb Network fast cycle RAMs (FCRAMTM*) with a maximum random access time of 20 nanoseconds, the fastest random access speed yet achieved. The new devices are dedicated to supporting high performance network applications, including switches and routers in network systems.

Toshiba's new Network FCRAMsTM combine leading edge 0.13-micrometer (micronm) process technology and enhanced DRAM technology to achieve a large memory capacity and random access time rivaling the speed of SRAM. Narrowing the active memory area achieves low power consumption and a random cycle time more than double that of present DRAM.

Toshiba currently manufacturers 256Mb Network FCRAMsTM with a random access time and data transfer rate at 25ns and 400Mbps, respectively. The new version raises both specifications, to 20ns and 666Mbps, by adopting 0.13micronm process technology and an optimized high-speed circuit. It also integrates two parity bits to detect and correct errors. The memory has a 4M words x 4 banks x 18 bits configuration.

The specification of Toshiba's Network FCRAMTM is fully compatible with Samsung's Network DRAMTM**, and Toshiba is now developing 36-bit Network FCRAMTM to the specifications agreed by the two companies; samples will be released in the second quarter of 2003. Toshiba and Samsung will also discuss standardization of the next generation Network FCRAMTM, scheduled for commercialization in 2004, which will have an operating frequency of over 400MHz.

The rapid evolution of the Internet and LAN is seeing data transactions grow in volume and frequency, stimulating demand for high performance networks supported by large capacity, high-speed memory in switching and router systems. Shorter transaction times can be achieved if servers incorporate large capacity, high speed memory that can live up to the potential of broadband capacity. With the introduction of its 288Mb Network FCRAMsTM, Toshiba is supporting the development of faster, more efficient networks, and reinforcing its large capacity, high-speed memory product line.

Samples of the new memories will be available in October 2002 at 5,500 yen. Mass production is slated for the first quarter of 2003 at a few hundred thousand units a month.

Major Outlines of New Products

  • Memory Configuration: 4M words x 4 banks x18 bits
  • Operating frequency: 250, 300 and 333MHz
  • Power Supply: 2.5V/ VddQ=1.8V
  • Random Access Time: maximum 20ns at 333MHz operation
  • Data Transfer Rate: maximum 666Mbps at 333MHz operation and double data rate mode
  • Adoption of variable length control that manages write burst length by write command
  • Write Latency: CAS latency-1 can shorten turnaround time and improve high efficiency of data transfer via bus.
  • Data strobe signal balls used in data read and write are separately assigned.
  • Package: mBGA-60-balls (1.0 x 1.0mm/15 x 4 row)
  • Built-in extended mode register enables driver strength of output buffers to be set at one of three levels.

Simulation Model

The new Network FCRAM devices are supported by advanced simulation models developed by Toshiba in cooperation with Denali Software Inc., a leading supplier of tools and technology for memory system design and verification. The models are compatible with all commercial Verilog and VHDL simulators, and are available immediately from Toshiba at: http://www.semicon.toshiba.co.jp/eng/prd/memory/ft_memory.html

Specifications of New Products

Specifications of New Products


* FCRAM is a trademark of Fujitsu Limited.
** Network DRAM is a trademark of Samsung Electronics Co., Ltd.
*** Memory Modeler AV is a trademark of Denali Software Inc.


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