| Toshiba to Introduce 2-Gigabit NAND Flash Memory|
13 March, 2003
TOKYO -- Toshiba Corporation, reinforcing its leadership in the development and fabrication of powerful, high capacity NAND flash memory, today introduced a 2-gigabit (Gb) single-die NAND flash memory with double the capacity of the company's present largest single-die NAND flash memory. Toshiba also announced a 4Gb NAND flash memory IC that stacks two of the 2Gb NAND flash in a single package. The new memories will realize much higher capacity flash memory cards capable of supporting a wide range of applications.
Samples of the new 2Gb NAND flash memory, TC58DVG14B1FT00, are now available at a unit price of 7,000 yen. Samples of the 4Gb NAND flash memory, TH58DVG24B1FT00, will be available at 14,000 yen in April 2003. Mass production will start in June 2003 at a monthly capacity of 300,000 units for each IC.
The 2Gb NAND flash memory was developed by Toshiba Corporation and SanDisk Corporation, under their 1999 comprehensive agreement on joint development of NAND flash memory. The new chips will be produced with advanced 0.13-micron process technology at the Flash Vision Japan, the joint venture between Toshiba and SanDisk located in Yokkaichi, Japan.
NAND flash memory ICs offer high density, non-volatile data retention and are widely employed in flash memory cards and as embedded memory in a digital consumer products such as digital still cameras, PDAs and mobile phones. With the introduction of new devices, Toshiba's NAND flash memory component line-up will range from 64-megabit to 4Gb (stacked version) devices, and further leverage the company's leadership in the NAND flash market.
Key Points of New ICs
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