| Sony and Toshiba Develop Fundamental Technologies for
Enhanced 45nm Generation System LSI
7 December , 2005
Tokyo--Toshiba Corporation and Sony Corporation today announced the development of essential technologies for system LSI based on next-generation 45-nanometer (nm) process technology. The advances cover the development of carrier mobility enhancement technologies and wiring process technology for boosting LSI performance.
Toshiba and Sony have raised current drive performance in transistors by developing strained silicon technologies that enhance carrier mobility. They have also developed a performance-enhancing low dielectric constant (low-k) film technology for implementation between layers in multi-layer wiring.
Two advances in strained silicon technologies improve individual transistor performance and overall device performance. The first optimizes the thickness of a stress liner covering the transistor and improves current drive performance by approximately 40%. The second brings global stress into the device substrate in a low cost process that realizes an approximately 20% improvement of current drive performance.
In seeking improved low-k film technology, Toshiba and Sony enhanced the quality of the low-k film by appropriately allocating dummy wiring to improve removal of moisture from the film. In doing so, they overcame the problem of poor drain characteristics in low-k film.
In 45nm generation system LSI, miniaturization of circuitry is no guarantee of performance improvement. Miniaturization must be accompanied by performance enhancement technologies, including utilization of new materials and structures. In following this approach, Toshiba and Sony have clarified conditions for applying innovative support technologies to actual products. The breakthroughs announced today offer elemental technologies that will support continued efforts to optimize other technologies.
Toshiba and Sony announced details of the technologies at the International Electron Devices Meeting (IEDM), which runs in Washington D.C. from December 5 to December 7.
More details of the new technologies
1. Strained silicon technologies
2) Global strained silicon
2. Low-k film technology
About Sony Corporation
Toshiba Corporation is a leader in the development and manufacture of electronic devices and components, information and communication systems, digital consumer products and power systems. The company’s ability to integrate wide-ranging capabilities, from hardware to software and services, assure its position as an innovator in diverse fields and many businesses. In semiconductors, Toshiba continues to promote its leadership in the fast growing system LSI market and to build on its world-class position in NAND flash memories, analog devices and discrete devices. Visit Toshiba’s website at www.toshiba.co.jp/index.htm
|Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement,but is subject to change without prior notice.|