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Toshiba to Adjust Production of NAND Flash Memory in Yokkaichi

Company to cut total production by some 30%
16 Dec, 2008

TOKYO--Toshiba Corporation (TOKYO: 6502) today announced an adjustment to production of NAND flash memory at its Yokkaichi Operations plant in Mie Prefecture, Japan. The adjustment will cut production by approximately 30%, effective from January 2009.

Recession in the global economy and the slowdown in consumer spending are having a significant impact on demand for semiconductors. This is particularly notable in NAND flash memories, where decreased demand for applications such as memory cards and MP3 players has generated excess supply. Toshiba has fully considered this situation and decided to reduce output at Yokkaichi.

Yokkaichi Operations has four fabs. Fab 3 and Fab 4 produce NAND flash memories on 300 millimeter (mm) wafers, Fab 1 and Fab 2 on 200mm wafers. Prior to the January production adjustment, the 300mm wafer lines will suspend operation for 13 days, and the 200mm wafer lines for four days, during the year-end and new-year period.

Toshiba will continue to monitor the NAND market and will review operation plan in Yokkaichi as needed.

As System LSI and Discrete are also facing weak demand for digital consumer products, Toshiba has also reviewed operating dates for its other semiconductor plants during the year-end and new-year period, and the details are as attached.

ATTACHMENT

The following details Toshiba’s fab operation schedules at its main semiconductor fabrication facilities for the year-end and new-year period.

Recession in the global economy and the slowdown in consumer spending are having a significant impact on demand for semiconductors. This is particularly notable in NAND flash memories, where decreased demand for applications such as memory cards and MP3 players has generated excess supply. System LSI and Discrete are also facing weak demand for digital consumer products. Toshiba has fully considered the overall situation and decided to suspend part of its operations, as described below.

Plant name, location and main products

2008 Year-end and 2009 New-year Production

Yokkaichi Operations
Yokkaichi city, Mie prefecture

Memory: NAND flash memories

The 300mm wafer lines will stop production for 13 days from December 31 to January 12, and the 200mm wafer lines will stop for four days from December 31 to January 3.

(The year-end, new-year holiday for the factory runs from December 28 to January 4, a total of eight days. During that period, the 300mm wafer lines will stop for five days, the 200mm wafer lines for four days)

Oita Operations
Oita city, Oita prefecture

System LSI: SoCs, CMOS image sensors

The 300mm wafer lines will stop on January 5 and 6 for maintenance and other lines will stop for 22 days from December 24 to January 14.

(The year-end, new-year holiday for the factory runs from December 24 to January 8, a total of 16 days. During that period, the 300mm wafer lines will operate daily, except January 5 and 6, and other lines will stop for 16 days.)

Kitakyushu Operations
Kitakyushu city, Fukuoka prefecture

System LSI: analog ICs
Discrete: opto semiconductors

Kitakyushu Operations will stop for 25 days from December 25 to January 18.

(The year-end, new-year holiday for the factory runs from December 28 to January 11, a total of 15 days, and all operations will stop during that period)

Himeji Operations-
Semiconductor

Ibo-gun, Hyogo prefecture

Discrete: power IC, small signal IC

Himeji Operations-Semiconductor will stop for 18 days from December 20 to January 6.

(The year-end, new-year holiday for the factory runs from December 28 to January 5, a total of nine days, and all operations will stop during that period)

 

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Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

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