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Toshiba introduces new embedded-NAND flash memory in 24nm process

Error Correction Code integrated chip with NAND interface simplifies product development
6 Apr, 2011
Image of Smart NAND, Toshiba's new embedded-NAND flash memory

 

TOKYO—Toshiba Corporation (TOKYO: 6502) today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation   24-nanometer (nm) generation "SmartNAND™," which integrate robust error management into the NAND package. The new chips will support simplified host-side design and application of advanced NAND process generation in consumer applications, including digital audio players, tablet PCs, information equipment, digital TVs, set-top boxes and other applications that require high-density, non-volatile memory.

Samples of the new SmartNAND line-up will be available from middle of April, and mass production will start in the second quarter of CY2011 (April to June).

The SmartNAND series packages integrate leading-edge 24nm process NAND flash technology with a control chip supporting error correction code (ECC). The five devices in the latest line-up range from 4 to 64 gigabyte (GB) capacities, and are expressly designed to remove the burden of ECC from the host processor while minimizing protocol changes. The SmartNAND portfolio is targeted for portable media players, tablet PCs and other consumer digital products etc.

The new 24nm product line-up will replace current 32nm generation devices, and its advanced process combined with faster controller and internal interface will realize faster read and write speeds and enhance overall performance. SmartNAND also supports a range of read and write speeds, optimized to suit design objectives, and four read modes and two write modes will be offered.

The new products utilize the long established raw NAND interface, and include new features that are optimized for high-capacity and high-performance applications. Managing bit errors is essential for digital products to maintain acceptable levels of performance and reliability. Installing error management with the NAND devices in a single package allows Toshiba's customers to take advantage of high capacity, advanced flash memory solutions offering excellent error management.

Demand continues to grow for large density chips that support high resolution video and enhanced storage, particularly for embedded memories with a controller function that minimizes development requirements and eases integration into system designs. Toshiba has established itself as an innovator in this key area, and is now reinforcing its leadership by further enhancing its SmartNAND.

Product Number Capacity Package Start of samples Start of mass production
THGVR1G5D1HTA00 4GB 48 pin TSOP May 2011 2Q, 2011
THGVR1G5D1HLA09 52 land LGA August 2011 3Q, 2011
THGVR1G6D1GTA00 8GB 48 pin TSOP April 2011 2Q, 2011
THGVR1G6D1GLA09 52 land LGA July 2011 3Q, 2011
THGVR1G7D2GTA00 16GB 48 pin TSOP September 2011 4Q, 2011
THGVR1G7D2GLA09 52 land LGA May 2011 2Q, 2011
THGVR1G8D4GLA09 32GB 52 land LGA June 2011 3Q, 2011
THGVR1G9D8GLA09 64GB 52 land LGA August 2011 3Q, 2011

 

Key Features 

1.
The integrated error correction (ECC) and leading edge 24nm process generation allows to bring enhanced speed performance of 1.9 times faster read speed and 1.5 times faster write speed than current line-up.
2.
Toshiba's SmartNAND offer range of read and write speeds to vary optimized speed performance; the read speed will be available in four options, and the write speed of two. Power save mode is also available for lower power requests.
3.
Toshiba's SmartNAND utilize a standard raw NAND interface, allowing easy replacement of standard NAND. SmartNAND can be applied to existing host controllers, with driver software support if necessary. This simplifies system development, allowing manufacturers to minimize development costs and to improve time to market for new and upgraded products.

Product Specifications

Interface Standard NAND flash memory interface
Page Size 8K Byte
Voltage Vcc=2.7~3.6V
Read & Write Mode ・4 Type Read Mode, 2 Type Write Mode
・Power Save Mode is applicable to all functions
Normal Mode &
Reliable Mode
・Normal Mode; MLC(2bit/Cell)
・In reliable mode, it operates as pseudo SLC, and the host side can set the area in block or chip basis for normal mode or reliable mode.
Package ・48 pin TSOP(12mm x 20mm x 1.2mm)
・52 land LGA  (14mm x 18mm x 1.0mm)

 

* "SmartNAND" is a trademark of TOSHIBA CORPORATION.

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Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

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