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Toshiba Launches New NAND Flash Memory Products for Embedded Applications

Compatible with widely used serial peripheral interface
21 Oct, 2015

New NAND Flash Memory Products “Serial Interface NAND”

TOKYO — Toshiba Corporation (TOKYO: 6502) today launched a new line-up of NAND flash memory products for embedded applications that are compatible with the widely used Serial Peripheral Interface (SPI). Wide ranging applications for the new “Serial Interface NAND” include such consumer applications as flat-screen TVs, printers and wearable devices, and industrial applications, including robots. Users can choose from a wide line-up of 12 products that offers three densities, 1Gbit, 2Gbit and 4Gbit; two packages, WSON*1 and SOP*2; and two power supply voltages. Samples shipment starts today and mass production is scheduled to begin with the 1Gbit products from December. Mass production of the remaining line-up will follow.

Compatibility with the widely used SPI, which can be controlled with just six pins, allows the new “Serial Interface NAND” to be used as SLC NAND flash memory, with a low pin count, small package and large capacity.

NOR flash memory is typically used in embedded applications for consumer and industrial devices. However, in order to realize extra functionality in embedded devices, demand is growing for larger memory densities for saving software (including boot up programs, firmware, and embedded OS) and data (including log data). This is driving demand for SLC NAND flash memory, which offers higher density and reliability and a lower bit cost than NOR flash memory.

By adding the “Serial Interface NAND” to its product line-up, Toshiba aims to meet wide ranging market needs and to expand the market for NAND flash memory.

 

*1
WSON: Very-Very thin Small Outline No Lead Package
*2
SOP: Small Outline Package


Outline of the New Products:

Part Number

Density

I/O

Voltage

Package

Mass Production

TC58CVG0S3HRAIF

1Gbit

x1, x2, x4

3.3V

WSON

Dec. 2015

TC58CVG0S3HQAIE

SOP

Dec. 2015

TC58CYG0S3HRAIF

1.8V

WSON

1Q(Jan.-Mar.) 2016

TC58CYG0S3HQAIE

SOP

1Q(Jan.-Mar.) 2016

TC58CVG1S3HRAIF

2Gbit

3.3V

WSON

1Q(Jan.-Mar.) 2016

TC58CVG1S3HQAIE

SOP

1Q(Jan.-Mar.) 2016

TC58CYG1S3HRAIF

1.8V

WSON

1Q(Jan.-Mar.) 2016

TC58CYG1S3HQAIE

SOP

1Q(Jan.-Mar.) 2016

TC58CVG2S0HRAIF

4Gbit

3.3V

WSON

Dec. 2015

TC58CVG2S0HQAIE

SOP

Dec. 2015

TC58CYG2S0HRAIF

1.8V

WSON

1Q(Jan.-Mar.) 2016

TC58CYG2S0HQAIE

SOP

1Q(Jan.-Mar.) 2016

Key Features of the New Products:

1.      Uses cutting-edge 24nm process technology for SLC NAND.

2.      Compatible with the widely used SPI, which can be controlled with a low pin count of six pins.

3.      Available in small and versatile packages. The WSON package is 6.0mm×8.0mm and the SOP package is 10.3mm×7.5mm. BGA*3 packaged products are also under development, with sample shipments scheduled for the first quarter (Jan.-Mar.) of 2016. The packages and the pin assignments are compatible with common serial flash memories.

4.      Embedded ECC (Error Correction Code) with bit flip count report function.

5.      Embedded data protection features.

 

*3
BGA: Ball Grid Array. The package will be 6.0mm×8.0mm, 5 ball×5 ball.

Key Specifications of the New Products:

Density

1Gbit / 2Gbit / 4Gbit

Page Sizes

2KByte (1Gbit, 2Gbit), 4KByte (4Gbit)

Interface

Serial Peripheral Interface Mode 0, Mode 3

I/O

x1, x2, x4

Voltages

2.7-3.6V, 1.7-1.95V

Operating Temperature Range

-40oC to 85oC

Packages

・8pin WSON (6mm × 8mm)

・16pin SOP (10.3mm × 7.5mm)

Others

・High speed sequential read function

・ECC function (ON/OFF, bit flip count report)

・Data protection function (able to protect specific blocks)

・Parameter page function (able to output detailed information
on the device)

Customer Inquiries:

Mobile Memory Sales & Marketing Department

Tel: +81-3-3457-3401

Category:

Information in the press releases, including product prices and specifications, content of services and contact information, is current on the date of the press announcement, but is subject to change without prior notice.

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