2014年 研究開発センター パンフレット





2015    [論文]
Y. Saito et al., “Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions”, J. Appl. Phys. 117, , 17C707 (2015).
2014    [論文]
T. Inokuchi et al., “Effect of electron trap states on spin-dependent transport characteristics in CoFe/MgO/n1-Si junctions investigated by Hanle effect measurements and inelastic electron tunneling spectroscopy”, Appl. Phys. Lett.105, 232401 (2014).
2014    [論文]
H. Sugiyama et al., “Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices”, Solid State Comm. 190, 49 (2014).
2014    [論文]
T. Tanamoto et al., “Effects of interface electric field on the magnetoresistance in spin devices”, J. Appl. Phys. 115, 163907 (2014).
2014    [論文]
Y. Saito et al., ”Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/SOI lateral spin valves”, J. Appl. Phys. 115, 17C514 (2014).
2013    [論文]
M. Ishikawa et al., “Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices”, J. Appl. Phys. 114, 243904 (2013).
2012    [論文]
Y. Saito et al., “Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/tunnel barrier/SOI devices”, IEEE Tran. Magn. 48, 2739- 2744 (2012).
2012    [論文]
M. Ishikawa et al., “Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon”, Appl. Phys. Lett.100, 252404 (2012).
2012    [論文]
T. Inokuchi et al., “Spin injection and detection between CoFe/AlO x junctions and SOI investigated by Hanle effect measurements”, J. Appl. Phys. 111, 07C316 (2012).
2011    [論文]
Y. Saito et al., “Spin-based MOSFET and its applications”, J. Electrochemical Soc. 158, H1068 (2011).
2010    [東芝レビュー]
2009    [ニュースリリース]

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