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TOKYO—Toshiba Corporation (TOKYO: 6502) today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a new line-up of six embedded NAND flash memory modules that offer full compliance with the latest  e•MMC^TM standard, and that are designed for application in a wide range of digital consumer products, including smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining sixteen 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplified embedding in products, reducing development burdens on product manufacturers.

Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e•MMC^TM standard and its new features, including defining multiple storage areas and enhanced security features.

Demand continues to grow for embedded memories with a controller function that minimizes development requirements and eases integration into system designs. Toshiba has established itself as an innovator in this key area. The company was first to announce a 32GB e•MMC^TM compliant device, and is now reinforcing its leadership by being first to market with a 64GB generation module.

New Product Line-up

Product Number	Capa.	Package	Sample Shipment	Mass Production	Production Scale
THGBM2G9DGFBAI2	64GB	169Ball FBGA 14x18x1.4mm	Dec. 2009	1Q, 2010 (Jan.-Mar.)	3 million/ month (Total)
THGBM2G8D8FBAIB	32GB	169Ball FBGA 12x16x1.4mm	Feb. 2010	2Q, 2010 (Apr.-Jun.)
THGBM2G7D4FBAI9	16GB	169Ball FBGA 12x16x1.2mm	Jan. 2010	1Q, 2010 (Jan.-Mar.)
THGBM2G6D2FBAI9	8GB	169Ball FBGA 12x16x1.2mm	Mar. 2010	2Q, 2010 (Apr.-Jun.)
THGBM2G5D1FBAI9	4GB	169Ball FBGA 12x16x1.2mm	Apr. 2010	2Q, 2010 (Apr.-Jun.)
THGBM2G4D1FBAI8	2GB	153Ball FBGA 11.5x13x1.2mm	2Q, 2010 (Apr.-Jun.)	3Q, 2010 (Jul.-Sep.)

 

Key Features

1.The JEDEC/MMCA V4.4 compliant interface handles essential functions, including writing block management, error correction and driver software. It simplifies system development, allowing manufacturers to minimize development costs and speed up time to market for new and upgraded products.

2.A wide product line-up supports capacities from 2 to 64GB. The high-capacity 64GB embedded devices can record up to 1,070 hours of music at a 128Kbps bit rate, 8.3 hours of full spec high definition video and 19.2 hours of standard definition video⁽³⁾.

3.The 64GB device stacks sixteen 32Gbit chips fabricated with leading-edge 32nm process technology. Application of advanced chip thinning, layering and wire bonding technologies allowed Toshiba to achieve individual chips only 30 micrometers thick, and to layer and bond them in a small package. The result is the highest density embedded NAND flash memory module in the industry.

The internal structure of the 64GB module

4.The new 64GB product is sealed in a small FBGA package which is D14 x W18 x H1.4mm and has a signal layout compliant with the JEDEC/MMCA V4.4.

Specifications

e•MMC^TM

Interface	JEDEC/MMCA V4.4 standard HS-MMC interface
Power Supply Voltage	2.7V to 3.6V (memory core); 1.65V to 1.95V / 2.7V to 3.6V (interface)
Bus width	x1, x4, x8
Write Speed	Target 20MB per sec. (Sequential/Interleave Mode) Target 9MB per sec. (Sequential/No Interleave Mode)*
Read Speed	Target 37MB per sec. (Sequential Mode/Interleave Mode) Target 22MB per sec. (Sequential/No Interleave Mode)*
Temperature range	-25degrees to +85degees Celsius
Package	153Ball FBGA (+16 support balls)

* Available only for THGBM2G5D1FBAI9 and THGBM2G4D1FBAI8.

⁽¹⁾

For embedded NAND flash memory modules. Source: Toshiba, December 2009

⁽²⁾

e•MMC ^TM is a trademark and a product category for a class of embedded memory products built to the joint JEDEC/MultiMediaCard Association (MMCA) MMC Standard specification.

⁽³⁾

HD and SD are calculated at average bit rates of 17Mbps and 7Mbps, respectively.