GaN HEMTs

GaN HEMTs(Gallium Nitride High Electron Mobility Transistor)GaN is a compound semiconductor with several times the output power capability of GaAs.

GaN HEMTs

Products

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Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI5059-120L 5.0-5.9 24 4.0 51.0 11.0 40 42 13.5 20 -25 44 7-AA06A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI5867-25L 5.85-6.75 24 1.75 44.5 2.7 39 35 13.5 20 -40 29 7-AA04A Download
TGI5867-50L 5.85-6.75 24 3.0 47.0 5.4 33 40 13.5 20 -40 32 7-AA04A Download
TGI5867-60LHA 5.85-6.75 40 0.4 48.0 3.5 38 40 12.5 20 -25 41 7-AA04A Download
TGI5867-130LHA 5.85-6.75 40 0.8 51.0 7.0 38 43 12.5 20 -25 44 7-AA06A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI5964-120L 5.9-6.4 24 4.0 51.0 10.0 42 43 13.5 20 -25 44 7-AA06A Download
製品情報 GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI6472-120L 6.4-7.2 24 4.0 51.0 11.0 38 44 11.5 20 -25 44 7-AA06A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI7179-60LHA 7.1-7.9 40 0.4 48.0 3.5 37 40.5 12.0 20 -25 41 7-AA04A Download
TGI7179-130LHA 7.1-7.9 40 0.8 51.0 7.0 36 43.5 12.0 20 -25 44 7-AA06A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI7785-25L 7.7-8.5 24 1.75 44.5 2.7 39 35 12.0 20 -40 29 7-AA04A Download
TGI7785-50L 7.7-8.5 24 3.0 47.0 5.0 33 40 11.0 20 -40 32 7-AA04A Download
TGI7785-60LHA 7.7-8.5 40 0.4 48.0 4.0 32 41 11.5 20 -25 41 7-AA04A Download
TGI7785-120L 7.7-8.5 24 4.0 51.0 10.0 42 44 11.0 20 -25 44 7-AA06A Download
TGI7785-130LHA 7.7-8.5 40 0.8 51.0 7.0 36 44 11.5 20 -25 44 7-AA06A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
TGI8596-50 8.5-9.6 24 1.5 47.0 5.0 31 41 9.0 20 7-AA04A Download
TGI0910-50 9.5-10.5 24 1.5 47.0 5.0 31 41 9.0 20 7-AA04A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
TGI9098-100P 9.0-9.8 24 6.0 50.0 10.0 40 42 12.0 35 7-AA03B Download
  • Pulse Operation

Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
IM3(dBc)
MIN.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
Po@SCL
(dBm)
TGI1213-25LA 12.7-13.2 24 1.0 44.0 2.5 29 39 8.0 20 -25 37 7-AA07A Download
TGI1213-50LA 12.7-13.2 24 2.0 47.0 5.0 29 42 8.0 20 -25 40 7-AA07A Download
TGI1314-25LA 13.75-14.5 24 1.0 44.0 2.5 29 39 8.0 20 -25 37 7-AA07A Download
TGI1314-50LA 13.75-14.5 24 2.0 47.0 5.0 29 42 8.0 20 -25 40 7-AA07A Download
Products GaN HEMT
MODEL No.
(DATA SHEET)
PDF
FREQUENCY
BAND(GHz)
BIAS CONDITIONS Pout(dBm)
TYP.
IDS(A)
TYP.
ηadd(%)
TYP.
GL(dB)
TYP.
PKG CODE
S-parameters
VDS
(V)
IDSset
(A)
@Pin
(dBm)
@Pin
(dBm)
TGM9398-25 9.3-9.8 24 1.2 44.0 2.6 38 23 24.0 7 7-BA42B Download
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