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Defense & Electronic Systems

Microwave Semiconductor

GaN HEMT

GaN HEMT

GaN HEMT（Gallium Nitride High Electron Mobility Transistor） GaN is a compound semiconductor with several times the output power capability of GaAs.
C-band GaAs FETs

C-band GaAs FETs

C-band（4~8GHz）GaAs FET（Gallium Arsenide Field Effect Transistor） GaAs is a compound semiconductor with excellent RF performance.
X, Ku-band GaAs FETs

X, Ku-band GaAs FETs

X-band（8~12GHz）and Ku-band（12~18GHz）GaAs FET（Gallium Arsenide Field Effect Transistor） GaAs is a compound semiconductor with excellent RF performance.

Model No. Format

Internally Matched GaAs FETs (Package Model)

Internally Matched GaAs FETs (Package Model)

Internally Matched GaN HEMT (Package Model)

Internally Matched GaN HEMT (Package Model)
  • (Note1)ID Number will be assigned for optional requirements.
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