Japanese
(Microwave)

Technology

Technical Article

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Technical Article
January 2022

Low CO2 Kawasaki Brand ‘21

Ku-band 100W Gallium Nitride High-Electron-Mobility Transistor (TGI1314-100 series) (1.1MB) (Low CO2 KAWASAKI BRAND PROMOTION COUNCIL)
October 2021

Power GaN MMIC Die

JS9U29-AS(Under Development)
JS9U30-AS(Under Development)
November 2018

Asia Pacific Microwave Conference 2018 (APMC)

53% PAE 32W Miniaturized X-band GaN HEMT Power Amplifier MMICs
A 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier
October 2015

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2015)

GaN MMIC for Ka-Band with 18W
November 2014

Asia Pacific Microwave Conference 2014 (APMC), November '14

GaN HEMTs are Still Ongoing
November 2014

European Microwave Conference 2014 (EuMC 2014), November '14

A 20-Watt Ka-Band GaN High Power Amplifier MMIC
May 2014

Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2014)

Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning
June 2011

International Microwave Symposium 2011 (IMS2011), June '11

GaN HEMTs with Pre-match for Ka-Band with 18W
May 2011

2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications

Developing GaN HEMTs for high efficiency
May 2011

Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2011), May '11

A Difference of Thermal Design Between GaN and GaAs
Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band
Octorber 2010

Compound Semiconductor IC Symposium 2010 (CSICS2010), Octorber '10

GaN HEMTs with Pre-match for Ka-Band with 20W
December 2009

2009 Asia Pacific Microwave Conference (APMC2009)

High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process
August 2009

Microwaves &RF, August '09

Sorting Through News From The Boston MTT-S (Endeavor Business Media, LLC.)
June 2009

International Microwave Symposium 2009 (IMS2009), June '09

Ku-Band AlGaN/GaN-HEMT with over 30% of PAE
Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs
May 2009

Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2009), May '09

Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance
May 2009

Microwave Journal, May '09

Development Report of Power FETs for Solid-state Power Amplifiers from GaAs to GaN Devices (Horizon House Publications Inc.)
January 2008

2008 IEEE Radio and Wireless Symposium (RWS2008)

An X-band 250W solid-state power amplifier using GaN power HEMTs
October 2007

Proceedings of the 2nd European Microwave Integrated Circuits Conference (EuMIC)

Ku-band AlGaN/GaN HEMT with Over 30W
May 2007

Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2007)

Reliability Study of AlGaN/GaN HEMTs Device
November 2006

2006 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2006)

X-band AlGaN/GaN HEMT with over 80W Output Power