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Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
October 09, 2007
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
TOKYO - Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. More
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band
November 13, 2006
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band
Tokyo-Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of gallium arsenide (GaAs) FET widely used in microwave solid-state amplifiers for radar and satellite microwave communications in the 8GHz to 12GHz X-band frequency range. More
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
September 12, 2005
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
Tokyo-Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications. More

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Technical Article

November 2018
Asia Pacific Microwave Conference 2018 (APMC)
53% PAE 32W Miniaturized X-band GaN HEMT Power Amplifier MMICs( PDF/936KB、 open this site in another window)
A 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier( PDF/576KB、 open this site in another window)
October 2015
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2015)
GaN MMIC for Ka-Band with 18W( PDF/401KB、 open this site in another window)
November 2014
Asia Pacific Microwave Conference 2014 (APMC), November '14
GaN HEMTs are Still Ongoing( PDF/408KB、 open this site in another window)
November 2014
European Microwave Conference 2014 (EuMC 2014), November '14
A 20-Watt Ka-Band GaN High Power Amplifier MMIC( PDF/97KB、 open this site in another window)
May 2014
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2014)
Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning
( PDF/578KB、 open this site in another window. This links to the outside website.)
June 2011
International Microwave Symposium 2011 (IMS2011), June '11
GaN HEMTs with Pre-match for Ka-Band with 18W( PDF/147KB、 open this site in another window)
May 2011
2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications
Developing GaN HEMTs for high efficiency( PDF/208KB、 open this site in another window)
May 2011
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2011), May '11
A Difference of Thermal Design Between GaN and GaAs( PDF/1.93MB、 open this site in another window. This links to the outside website.)
Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band( PDF/3.58MB、 open this site in another window. This links to the outside website.)
Octorber 2010
Compound Semiconductor IC Symposium 2010 (CSICS2010), Octorber '10
GaN HEMTs with Pre-match for Ka-Band with 20W( PDF/97KB、 open this site in another window)
December 2009
2009 Asia Pacific Microwave Conference (APMC2009)
High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process( PDF/256KB、 open this site in another window)
August 2009
Microwaves &RF, August '09
Sorting Through News From The Boston MTT-S open this site in another window. This links to the outside website.)
June 2009
International Microwave Symposium 2009 (IMS2009), June '09
Ku-Band AlGaN/GaN-HEMT with over 30% of PAE( PDF/290KB、 open this site in another window)
Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs( PDF/2.04MB、 open this site in another window)
May 2009
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2009), May '09
Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance
( PDF/536KB、 open this site in another window. This links to the outside website.)
May 2009
Microwave Journal, May '09
Development Report of Power FETs for Solid-state Power Amplifiers from GaAs to GaN Devices
( open this site in another window. This links to the outside website.)
January 2008
2008 IEEE Radio and Wireless Symposium (RWS2008)
An X-band 250W solid-state power amplifier using GaN power HEMTs( PDF/1.33MB、 open this site in another window)
October 2007
Proceedings of the 2nd European Microwave Integrated Circuits Conference (EuMIC)
Ku-band AlGaN/GaN HEMT with Over 30W( PDF/392KB、 open this site in another window)
May 2007
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2007)
Reliability Study of AlGaN/GaN HEMTs Device
( PDF/175KB、 open this site in another window. This links to the outside website.)
November 2006
2006 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS2006)
X-band AlGaN/GaN HEMT with over 80W Output Power( PDF/215KB、 open this site in another window)

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TOSHIBA REVIEW

December 2014
X-Band 130 W-Class GaN HEMT for SSPAs in Radar Systems open this site in another window.)
December 2012
Activities Related to Practical Realization of GaN HEMT Products for Satellite Communication Applications open this site in another window.)
August 2012
Small-Package X-Band 25 W-Class Power Amplifier Module open this site in another window.)
February 2012
1 kW-Class GaN Solid-State Power Amplifier for 5 GHz-Band Weather Radar Systems open this site in another window.)
May 2011
Ka-Band 20 W-Class GaN Power HEMT open this site in another window.)
November 2010
C-Band 16 W-Class Internally Matched GaAs FETs open this site in another window.)
November 2008
High-Efficiency X- and Ku-Band GaAs FETs open this site in another window.)
May 2008
Ku-Band 50 W-Class GaN HEMT open this site in another window.)
February 2008
GaN Solid State Power Amplifier for X-band Weather Radar Systems open this site in another window.)
April 2007
X-Band 50-W Class GaN Power HEMT open this site in another window.)
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